SCI SOC QU Questioning How can the depth of etched features be measured in real time during a semiconductor etching… Osipov, A. A., Iankevich, G. A., Speshilova, A. B., Gagaeva, A. E., Osipov, A. A., Enns, Y. B., … Alexandrov, S. E. (2022, March 28). OES…
SCI SOC QU Questioning How can the precise moment of contamination occurrence during the sub-etching steps be accurately… Diagnosing the precise moment at which contamination occurs during sub-etching steps remains a significant challenge. Considering that…
SCI SOC QU Questioning How can the sidewall profile and slope of high-aspect-ratio holes be controlled during the etching… As high-aspect-ratio etching becomes increasingly important for fabricating smaller and denser hole structures in advanced semiconductor…
SCI SOC QU Questioning How can contaminant deposition inside the hole be prevented during the semiconductor etching… Given that achieving a high aspect ratio is critically important for enabling efficient vertical scaling in NAND flash devices, preventing…
SCI SOC QU Questioning How can the gradient of the critical dimension in depth level variance be measured with respect to… Given that the distance between hole slopes must be carefully considered to prevent improper connections, the critical dimension…